Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation-Reference-Cited by-同舟云学术

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Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation

Published:2003-01-15 Issue:Part 2, No.1A/B Volume:42 Page:L1-L3
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Oshima Yuichi,Eri Takeshi,Shibata Masatomo,Sunakawa Haruo,Kobayashi Kenji,Ichihashi Toshinari,Usui Akira

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/42/i=1A/a=L1/pdf

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