GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates-Reference-Cited by-同舟云学术

GaN–AlGaN heterostructure field-effect transistors over bulk GaN substrates

Published:2000-06-19 Issue:25 Volume:76 Page:3807-3809
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Asif Khan M.,Yang J. W.,Knap W.,Frayssinet E.,Hu X.,Simin G.,Prystawko P.,Leszczynski M.,Grzegory I.,Porowski S.,Gaska R.,Shur M. S.,Beaumont B.,Teisseire M.,Neu G.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.126788

Reference13 articles.

1. Observation of a two‐dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN‐AlxGa1−xN heterojunctions

2. Observation of a two‐dimensional electron gas in low pressure metalorganic chemical vapor deposited GaN‐AlxGa1−xN heterojunctions

3. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction

4. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

5. Microwave noise performance of AlGaN/GaN HEMTs

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