Author:
Yoshikawa Akira,Nagatomi Takaharu,Nagase Kazuhiro,Sugiyama Sho,Schowalter Leo J.
Abstract
Abstract
In this study, a 21 nm thick GaN layer with a single-step terrace surface was pseudomorphically grown on an AlN single-crystal substrate using metal organic vapor phase epitaxy by increasing the growth rate up to 1 μm h−1 at a growth temperature of 850 °C and a reactor pressure of 5 kPa. The growth temperature and rate were found to be the factors dominating the flatness and coverage of the thin-GaN layer, revealing that controlling the degree of Ga migration is crucial. Furthermore, threading dislocations was not observed for the thin-GaN layer, with a flat surface, grown on the AlN substrate.