A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy-Reference-Cited by-同舟云学术

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A comprehensive diagram to grow (0001)InGaN alloys by molecular beam epitaxy

Published:2013-02 Issue: Volume:364 Page:123-127
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Gačević Ž.,Gómez V.J.,Lepetit N.García,Soto Rodríguez P.E.D.,Bengoechea A.,Fernández-Garrido S.,Nötzel R.,Calleja E.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference23 articles.

1. The Blue Laser Diode: The Complete Story;Nakamura,2000

2. Carrier loss and luminescence degradation in green-light-emitting InGaN quantum wells with micron-scale indium clusters

3. Internal quantum efficiency of III-nitride quantum dot superlattices grown by plasma-assisted molecular-beam epitaxy

4. InGaN multiple quantum well laser diodes grown by molecular beam epitaxy

5. InGaN laser diodes and high brightness light emitting diodes grown by molecular beam epitaxy

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature and Source Flux Dependence of Light Emission, In Incorporation and Quantum Confinement in Self-Formed Core–Shell InGaN Nanowires;Crystal Growth & Design;2024-09-05

2. High nitrogen flux plasma-assisted molecular beam epitaxy growth of InxGa1-xN films;Journal of Crystal Growth;2020-09

3. Tuning carrier localization in In-rich InGaN alloys: Correlations between growth kinetics and optical properties;Journal of Applied Physics;2020-06-14

4. Impact of growth conditions and strain on indium incorporation in non-polar m-plane (101¯0) InGaN grown by plasma-assisted molecular beam epitaxy;APL Materials;2019-12-01

5. Raman spectroscopy of epitaxial InGaN/Si in the central composition range;Japanese Journal of Applied Physics;2019-05-14

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