Temperature and Source Flux Dependence of Light Emission, In Incorporation and Quantum Confinement in Self-Formed Core–Shell InGaN Nanowires-Reference-Cited by-同舟云学术

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Temperature and Source Flux Dependence of Light Emission, In Incorporation and Quantum Confinement in Self-Formed Core–Shell InGaN Nanowires

Published:2024-09-05 Issue: Volume: Page:
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Deng Rongli¹^ORCID,Pu Xuan¹,Yang Guanzhao¹,Zhang Wenfeng¹^ORCID,Lin Haibin¹,Li Junyong¹,Nötzel Richard¹²^ORCID

Affiliation:

1. Guangdong Provincial Key Laboratory of Optical Information Materials and Technology, South China Academy of Advanced Optoelectronics, South China Normal University, Guangzhou 510006, People’s Republic of China

2. National Center for International Research on Green Optoelectronics, South China Normal University, Guangzhou 510006, People’s Republic of China

Funder

Program for Chang Jiang Scholars and Innovative Research Team in University

111 Project

Guangdong Provincial Key Laboratory of Optical Information Materials and Technology

MOE International Laboratory for Optical Information Technologies

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.4c00921

Reference30 articles.

1. Growth of InGaN nanowires on a (111)Si substrate by RF-MBE

2. Spontaneous core–shell elemental distribution in In-rich InxGa1−xN nanowires grown by molecular beam epitaxy

3. Quantitative Model for the MBE-Growth of Ternary Nitrides

4. Surface kinetics and thermal instability of N-face InN grown by plasma-assisted molecular beam epitaxy

5. Theoretical study of In desorption and segregation kinetics in MBE growth of InGaAs and InGaN

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