Spontaneous core–shell elemental distribution in In-rich InxGa1−xN nanowires grown by molecular beam epitaxy-Reference-Cited by-同舟云学术

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Spontaneous core–shell elemental distribution in In-rich InxGa1−xN nanowires grown by molecular beam epitaxy

Published:2014-01-23 Issue:7 Volume:25 Page:075705
ISSN:0957-4484
Container-title:Nanotechnology
language:
Short-container-title:Nanotechnology

Author:

Gómez-Gómez M,Garro N,Segura-Ruiz J,Martinez-Criado G,Cantarero A,Mengistu H T,García-Cristóbal A,Murcia-Mascarós S,Denker C,Malindretos J,Rizzi A

Publisher

IOP Publishing

Subject

Electrical and Electronic Engineering,Mechanical Engineering,Mechanics of Materials,General Materials Science,General Chemistry,Bioengineering

Link

http://stacks.iop.org/0957-4484/25/i=7/a=075705/pdf

Reference43 articles.

1. Growth of Self-Organized GaN Nanostructures on $\bf Al_{2}O_{3}(0001)$ by RF-Radical Source Molecular Beam Epitaxy

2. Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy

3. Photoluminescence and Intrinsic Properties of MBE-Grown InN Nanowires

4. Molecular beam epitaxy growth and optical properties of AlN nanowires

5. Complete composition tunability of InGaN nanowires using a combinatorial approach

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1. Temperature and Source Flux Dependence of Light Emission, In Incorporation and Quantum Confinement in Self-Formed Core–Shell InGaN Nanowires;Crystal Growth & Design;2024-09-05

2. Superior Thermoelectric Performance of SiGe Nanowires Epitaxially Integrated into Thermal Micro‐Harvesters;Small;2023-01-31

3. Anisotropic Piezoelectric Response from InGaN Nanowires with Spatially Modulated Composition and Topography over a Textured Si(100) Substrate;ACS Applied Materials & Interfaces;2021-02-04

4. Inter-facet composition modulation of III-nitride nanowires over pyramid textured Si substrates by stationary molecular beam epitaxy;Nano Research;2020-12-03

5. The role of surface diffusion in the growth mechanism of III-nitride nanowires and nanotubes;Nanotechnology;2020-12-02

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