Molecular beam epitaxy growth and optical properties of AlN nanowires
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3315943
Reference24 articles.
1. On the mechanisms of spontaneous growth of III-nitride nanocolumns by plasma-assisted molecular beam epitaxy
2. From nucleation to growth of catalyst-free GaN nanowires on thin AlN buffer layer
3. Mechanism of molecular beam epitaxy growth of GaN nanowires on Si(111)
4. Mechanism for spontaneous growth of GaN nanowires with molecular beam epitaxy
5. Plasma-assisted molecular beam epitaxy growth of GaN nanowires using indium-enhanced diffusion
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2. Surface optical phonon-assisted exciton photoluminescence spectroscopy in Q1D AlN nanostructures;Applied Physics Letters;2023-09-25
3. Growth kinetics and substrate stability during high-temperature molecular beam epitaxy of AlN nanowires;Nanotechnology;2023-09-01
4. Structural and photoluminescence study of thin GaN and AlN/GaN nanowires;Journal of Materials Science: Materials in Electronics;2023-04
5. Molecular beam epitaxy growth and characterization of AlGaN epilayers in nitrogen-rich condition on Si substrate;Materials Science in Semiconductor Processing;2021-11
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