Impact of growth conditions and strain on indium incorporation in non-polar m-plane (101¯0) InGaN grown by plasma-assisted molecular beam epitaxy-Reference-Cited by-同舟云学术

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Impact of growth conditions and strain on indium incorporation in non-polar m-plane (101¯0) InGaN grown by plasma-assisted molecular beam epitaxy

Published:2019-12-01 Issue:12 Volume:7 Page:121109
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Senichev Alexander¹²^ORCID,Dzuba Brandon¹²,Nguyen Trang²,Cao Yang²,Capano Michael A.¹³,Manfra Michael J.¹²³⁴,Malis Oana²^ORCID

Affiliation:

1. Birck Nanotechnology Center, West Lafayette, Indiana 47907, USA

2. Department of Physics and Astronomy, Purdue University, West Lafayette, Indiana 47907, USA

3. School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA

4. School of Materials Engineering, Purdue University, West Lafayette, Indiana 47907, USA

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5121445

Reference24 articles.

1. High-Modulation-Efficiency, Integrated Waveguide Modulator–Laser Diode at 448 nm

2. Monolithic III-nitride photonic integration toward multifunctional devices

3. A quantum optical study of thresholdless lasing features in high-β nitride nanobeam cavities

4. Adatom diffusion at GaN (0001) and (0001̄) surfaces

5. Large anisotropic adatom kinetics on nonpolar GaN surfaces: Consequences for surface morphologies and nanowire growth

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1. Effects of Mg-doping temperature on the structural and electrical properties of nonpolar a-plane p-type GaN films;Chinese Physics B;2023-12-01

2. Optical Properties of Low‐dimensional Structures in GroupIIINitrides;Group III‐Nitride Semiconductor Optoelectronics;2023-10-18

3. Comparative investigation into polarization field-dependent internal quantum efficiency of semipolar InGaN green light-emitting diodes: A strategy to mitigate green gap phenomenon;Materials Today Communications;2022-06

4. Effect of spiral-like islands on structural quality, optical and electrical performance of InGaN/GaN heterostructures grown by metal organic chemical vapour deposition;Materials Science in Semiconductor Processing;2022-05

5. Photoluminescence Study of Carrier Localization and Recombination in Nearly Strain‐Balanced Nonpolar InGaN/AlGaN Quantum Wells;physica status solidi (b);2022-03-06

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