Effect of spiral-like islands on structural quality, optical and electrical performance of InGaN/GaN heterostructures grown by metal organic chemical vapour deposition

Author:

Prabakaran K.,Ramesh R.ORCID,Arivazhagan P.,Jayasakthi M.,Sanjay S.,Surender S.,Davis Jacob I.,Balaji M.ORCID,Baskar K.

Funder

Department of Science and Technology, Ministry of Science and Technology, India

Science and Engineering Research Board

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference55 articles.

1. Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells;Funato;AIP Adv.,2015

2. MOVPE growth of InGaN (x∼ 0.4) and fabrication of homo-junction solar cells;Islam;J. Mater. Sci. Technol.,2013

3. Morphological study of InGaN on GaN substrate by supersaturation;Liu;J. Cryst. Growth,2019

4. Epitaxy of gallium nitride pyramids on few layer graphene for metal-semiconductor-metal based photodetectors;Sanjay;Mater. Chem. Phys.,2020

5. The effect of nanometre-scale V-pits on electronic and optical properties and efficiency droop of GaN-based green light-emitting diodes;Zhou;Sci. Rep.,2018

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