MOVPE Growth of InxGa1−xN (x ∼ 0.4) and Fabrication of Homo-junction Solar Cells-Reference-Cited by-同舟云学术

MOVPE Growth of InxGa1−xN (x ∼ 0.4) and Fabrication of Homo-junction Solar Cells

Published:2013-02 Issue:2 Volume:29 Page:128-136
ISSN:1005-0302
Container-title:Journal of Materials Science & Technology
language:en
Short-container-title:Journal of Materials Science & Technology

Author:

Islam Md. Rafiqul,Kaysir Md. Rejvi,Islam Md. Jahirul,Hashimoto A.,Yamamoto A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Polymers and Plastics,Mechanical Engineering,Mechanics of Materials,Ceramics and Composites

Reference52 articles.

1. Theoretical possibilities of InxGa1−xN tandem PV structures

2. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

3. O. Jani, B. Jampana, M. Mehta, H. Yu, I. Ferguson, R. Opila, C. Honsberg, in: Proceedings of 33rd IEEE Photovoltaic Specialists Conference, San Diego, USA, May 12–16, 2008.

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