Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In<sub><i>x</i></sub>Ga<sub>1–<i>x</i></sub>N-Reference-Cited by-同舟云学术

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Overcoming the Miscibility Gap of GaN/InN in MBE Growth of Cubic In_xGa_1–xN

Published:2023-08-02 Issue:33 Volume:15 Page:39513-39522
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Zscherp Mario Fabian¹^ORCID,Jentsch Silas Aurel¹,Müller Marius Johannes¹^ORCID,Lider Vitalii²^ORCID,Becker Celina²,Chen Limei¹,Littmann Mario³^ORCID,Meier Falco³,Beyer Andreas²^ORCID,Hofmann Detlev Michael¹,As Donat Josef³,Klar Peter Jens¹^ORCID,Volz Kerstin²,Chatterjee Sangam¹^ORCID,Schörmann Jörg¹^ORCID

Affiliation:

1. Institute of Experimental Physics I and Center for Materials Research, Justus Liebig University Giessen, Heinrich-Buff-Ring 16, D-35392 Giessen, Germany

2. Materials Science Center and Faculty of Physics, Philipps-University Marburg, Hans-Meerwein-Strasse 6, D-35032 Marburg, Germany

3. Department of Physics, Paderborn University, Warburger Strasse 100, D-33098 Paderborn, Germany

Funder

European Regional Development Fund

Deutsche Forschungsgemeinschaft

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c06319

Reference69 articles.

1. Cubic GaN and InGaN/GaN quantum wells

2. Optical properties of cubic GaN from 1 to 20 eV

3. Photoluminescence studies of cubic GaN epilayers

4. Molecular beam epitaxy of phase pure cubic InN

5. High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment

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1. Efficiency of InN/InGaN/GaN Intermediate-Band Solar Cell under the Effects of Hydrostatic Pressure, In-Compositions, Built-in-Electric Field, Confinement, and Thickness;Nanomaterials;2024-01-01

2. Linear and nonlinear optical absorption coefficients in InGaN/GaN quantum wells: Interplay between intense laser field and higher-order anharmonic potentials;Heliyon;2023-12

3. Enhancing Emission via Radiative Lifetime Manipulation in Ultrathin InGaN/GaN Quantum Wells: The Effects of Simultaneous Electric and Magnetic Fields, Thickness, and Impurity;Nanomaterials;2023-10-24

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