High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment-Reference-Cited by-同舟云学术

High-phase-purity zinc-blende InN on r-plane sapphire substrate with controlled nitridation pretreatment

Published:2008-03-17 Issue:11 Volume:92 Page:111914
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Hsiao Ching-Lien,Liu Ting-Wei,Wu Chien-Ting,Hsu Hsu-Cheng,Hsu Geng-Ming,Chen Li-Chyong,Shiao Wen-Yu,Yang C. C.,Gällström Andreas,Holtz Per-Olof,Chen Chia-Chun,Chen Kuei-Hsien

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2898214

Reference26 articles.

1. Epitaxial growth of hexagonal and cubic InN films

2. Molecular beam epitaxy of phase pure cubic InN

3. RF-MBE growth and structural characterization of cubic InN films on GaAs

4. Growth of cubic InN on InAs(001) by plasma-assisted molecular beam epitaxy

5. Growth of cubic InN on r-plane sapphire

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