RF-MBE growth and structural characterization of cubic InN films on GaAs
Author:
Publisher
Wiley
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference4 articles.
1. Growth of cubic InN on InAs(001) by plasma-assisted molecular beam epitaxy
2. Growth of cubic InN on r-plane sapphire
3. Epitaxial growth of hexagonal and cubic InN films
4. Reduction of Planar Defect Density in Laterally Overgrown Cubic-GaN on Patterned GaAs(001) Substrates by MOVPE
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2. High cubic phase purity and growth mechanism of cubic InN thin-films by Migration Enhanced Epitaxy;Thin Solid Films;2018-02
3. Phase Identification of III-N Thin Films Grown by Molecular Beam Epitaxy and Migration Enhanced Epitaxy using Precession Electron Diffraction;Microscopy and Microanalysis;2017-07
4. High-quality cubic and hexagonal InN crystals studied by micro-Raman scattering and electron backscatter diffraction;Journal of Physics D: Applied Physics;2016-03-16
5. Study of structural properties of cubic InN films on GaAs(001) substrates by molecular beam epitaxy and migration enhanced epitaxy;Journal of Applied Physics;2013-06-07
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