Study of structural properties of cubic InN films on GaAs(001) substrates by molecular beam epitaxy and migration enhanced epitaxy-Reference-Cited by-同舟云学术

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Study of structural properties of cubic InN films on GaAs(001) substrates by molecular beam epitaxy and migration enhanced epitaxy

Published:2013-06-07 Issue:21 Volume:113 Page:214308
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Casallas-Moreno Y. L.,Pérez-Caro M.,Gallardo-Hernández S.,Ramírez-López M.,Martínez-Velis I.,Escobosa-Echavarría A.,López-López M.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4809644

Reference22 articles.

1. Indium nitride (InN): A review on growth, characterization, and properties

2. A trade-off relation between tilt and twist angle fluctuations in InN grown by RF-MBE

3. Band gap and effective electron mass of cubic InN

4. Structural and optical properties of cubic-InN quantum dots prepared by ion implantation in Si (100) substrate

5. Light Emitting Diodes (LEDs) for General Illumination, Update 2002, edited by J. Y. Tsao (Sandia National Laboratories, 2002), p. 56.

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1. Review of the Properties of GaN, InN, and Their Alloys Obtained in Cubic Phase on MgO Substrates by Plasma-Enhanced Molecular Beam Epitaxy;Crystals;2024-09-11

2. Cubic InxGa1−xN/GaN quantum wells grown by Migration Enhanced Epitaxy (MEE) and conventional Molecular Beam Epitaxy (MBE);Journal of Alloys and Compounds;2022-11

3. Crystal quality improvement of ZnTe (1 1 0) thin film prepared on sapphire by increasing nuclei density on substrate surface;Journal of Crystal Growth;2022-10

4. Control of the Nucleation Layers of (110)-Oriented ZnTe Thin Film Growth on r-Plane and S-Plane Sapphire Nanofaceted Substrates;Journal of Electronic Materials;2022-03-03

5. The performance analysis of the GaAs/c-InN solar photovoltaic cell hetero-structure: temperature dependence;Optical and Quantum Electronics;2020-09

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