Structural and optical properties of cubic-InN quantum dots prepared by ion implantation in Si (100) substrate
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2766653
Reference14 articles.
1. Properties of InN layers grown on 6H–SiC(0001) by plasma-assisted molecular beam epitaxy
2. Heteroepitaxial growth of wurtzite InN films on Si(111) exhibiting strong near-infrared photoluminescence at room temperature
3. A comparative study of OMVPE-grown InN heteroepitaxial layers on GaAs(1 1 1)B and α-Al2O3(0 0 0 1) substrates
4. Growth of cubic InN on InAs(001) by plasma-assisted molecular beam epitaxy
5. Band structures and optical spectra of InN polymorphs: Influence of quasiparticle and excitonic effects
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1. Simulation and experimental study of InN nanoparticles synthesized by ion implantation technology;Journal of Molecular Modeling;2024-07
2. Structural and phonon properties of InN synthesized by ion implantation in SiO2;Thin Solid Films;2015-11
3. Light Emitting Single-Crystalline Silicon Wafers Implanted with V and III Group Ions;Acta Physica Polonica A;2014-06
4. Study of structural properties of cubic InN films on GaAs(001) substrates by molecular beam epitaxy and migration enhanced epitaxy;Journal of Applied Physics;2013-06-07
5. Formation of embedded indium nitride and indium oxide nanoclusters in silica samples sequentially implanted with indium and nitrogen ions;Journal of Experimental Nanoscience;2012-07-18
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