A trade-off relation between tilt and twist angle fluctuations in InN grown by RF-MBE-Reference-Cited by-同舟云学术

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A trade-off relation between tilt and twist angle fluctuations in InN grown by RF-MBE

Published:2008-05 Issue:6 Volume:5 Page:1876-1878
ISSN:1610-1634
Container-title:physica status solidi (c)
language:en
Short-container-title:phys. stat. sol. (c)

Author:

Hashimoto A.,Iwao K.,Yamamoto A.

Publisher

Wiley

Subject

Condensed Matter Physics

Reference4 articles.

1. Study of different type of dislocations in GaN thin films

2. et al., Technical Digest IWNS 2006, p. 117 (2006).

3. Mosaic structure in epitaxial thin films having large lattice mismatch

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Catalyst free growth of high density uniform InN nanocolumns on p-GaAs(001) surface by PA-MBE and their in situ XPS analysis;Applied Surface Science;2015-03

2. Band alignment of InN/6H-SiC heterojunction determined by x-ray photoelectron spectroscopy;Applied Physics Letters;2014-08-11

3. Study of structural properties of cubic InN films on GaAs(001) substrates by molecular beam epitaxy and migration enhanced epitaxy;Journal of Applied Physics;2013-06-07

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