Band gap and effective electron mass of cubic InN
Author:
Publisher
Wiley
Subject
Condensed Matter Physics
Reference15 articles.
1. InNdielectric function from the midinfrared to the ultraviolet range
2. Optimization of the surface and structural quality of N-face InN grown by molecular beam epitaxy
3. Structure and electronic properties of InN and In-rich group III-nitride alloys
4. Dielectric function and Van Hove singularities for In-richInxGa1−xNalloys: Comparison of N- and metal-face materials
5. Temperature invariance ofInNelectron accumulation
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1. The Effect of Pressure on Band Parameters and Optical Characteristics in Indium Nitride;Journal of Electronic Materials;2022-04-25
2. Tight Binding and Density Functional Theory of Tailoring Electronic Properties in Al1−xInxN/AlN/GaN High Electron Mobility Transistors (HEMTs);Topics in Applied Physics;2022
3. Structural and electronic properties of wurtzite, zincblende and rocksalt Al1 − xInxN ternary alloys at ambient and high pressure;Phase Transitions;2018-10-04
4. Optical properties of In2O3 from experiment and first-principles theory: influence of lattice screening;New Journal of Physics;2018-05-04
5. Self-organized growth of cubic InN dot arrays on cubic GaN using MgO (001) vicinal substrates;physica status solidi (b);2016-11-10
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