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InNdielectric function from the midinfrared to the ultraviolet range

  • Published:2004-09-30 Issue:11 Volume:70 Page:
  • ISSN:1098-0121
  • Container-title:Physical Review B
  • language:en
  • Short-container-title:Phys. Rev. B

Author:

Kasic A.,Valcheva E.,Monemar B.,Lu H.,Schaff W. J.

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 48 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Photodetectors;Group III‐Nitride Semiconductor Optoelectronics;2023-10-18

2. Indium gallium nitride on silicon heterojunction Schottky barrier solar cell characteristics;MRS Communications;2021-06-08

3. Effect of AlN buffer layers on the structural and optoelectronic properties of InN/AlN/Sapphire heterostructures grown by MEPA-MOCVD;Fifteenth International Conference on Solid State Lighting and LED-based Illumination Systems;2016-09-07

4. First principles study on the spin unrestricted electronic structure properties of transition metal doped InN nanoribbons;Superlattices and Microstructures;2015-08

5. Spectral dependence of third-order nonlinear optical properties in InN;Applied Physics Letters;2014-05-19
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