Phase Identification of III-N Thin Films Grown by Molecular Beam Epitaxy and Migration Enhanced Epitaxy using Precession Electron Diffraction-Reference-Cited by-同舟云学术

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Phase Identification of III-N Thin Films Grown by Molecular Beam Epitaxy and Migration Enhanced Epitaxy using Precession Electron Diffraction

Published:2017-07 Issue:S1 Volume:23 Page:1484-1485
ISSN:1431-9276
Container-title:Microscopy and Microanalysis
language:en
Short-container-title:Microsc Microanal

Author:

Ortega Eduardo,Casallas-Moreno Y. L.,Lopez-Lopez M.,Ponce Arturo

Publisher

Cambridge University Press (CUP)

Subject

Instrumentation

Reference4 articles.

1. The work was supported by SENER-CONACYT Project number 151076 and by the National Institute on Minority Health and Health Disparities of the NIH grant G12MD007591.

2. Precession electron diffraction-assisted crystal phase mapping of metastable c-GaN films grown on (001) GaAs

3. Study of structural properties of cubic InN films on GaAs(001) substrates by molecular beam epitaxy and migration enhanced epitaxy

4. RF-MBE growth and structural characterization of cubic InN films on GaAs

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