Photoluminescence studies of cubic GaN epilayers-Reference-Cited by-同舟云学术

Photoluminescence studies of cubic GaN epilayers

Published:2017-02-21 Issue:8 Volume:254 Page:1600733
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Church S. A.¹,Hammersley S.¹,Mitchell P. W.¹,Kappers M. J.²,Sahonta S. L.²,Frentrup M.²,Nilsson D.³,Ward P. J.³,Shaw L. J.³,Wallis D. J.²,Humphreys C. J.²,Oliver R. A.²,Binks D. J.¹,Dawson P.¹

Affiliation:

1. School of Physics and Astronomy, Photon Science Institute, University of Manchester; Manchester M13 9PL UK

2. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road; Cambridge CB3 0FS UK

3. Anvil Semiconductors Ltd., Future Business Centre, King's Hedges Road; Cambridge CB4 2HY UK

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference33 articles.

1. Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells

2. Room temperature green light emission from nonpolar cubic InGaN∕GaN multi-quantum-wells

3. Cubic group-III nitride-based nanostructures—basics and applications in optoelectronics

4. Green cubic GaInN/GaN light-emitting diode on microstructured silicon (100)

5. Green Emitting Cubic GaInN/GaN Quantum Well Stripes on Micropatterned Si(001) and Their Strain Analysis

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