Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells-Reference-Cited by-同舟云学术

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Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells

Published:2001-12-24 Issue:26 Volume:79 Page:4319-4321
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chichibu S. F.,Sugiyama M.,Onuma T.,Kitamura T.,Nakanishi H.,Kuroda T.,Tackeuchi A.,Sota T.,Ishida Y.,Okumura H.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1428404

Reference30 articles.

1. Cubic phase gallium nitride by chemical vapour deposition

2. GaN, AlN, and InN: A review

3. Growth and characterization of cubic GaN

4. Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures

5. Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures

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