Photoluminescence Study of Carrier Localization and Recombination in Nearly Strain‐Balanced Nonpolar InGaN/AlGaN Quantum Wells-Reference-Cited by-同舟云学术

Photoluminescence Study of Carrier Localization and Recombination in Nearly Strain‐Balanced Nonpolar InGaN/AlGaN Quantum Wells

Published:2022-03-06 Issue:6 Volume:259 Page:2100569
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Physica Status Solidi (b)

Author:

Cao Yang¹,Dzuba Brandon¹²,Magill Brenden A.³,Senichev Alexander¹²⁴,Nguyen Trang¹,Diaz Rosa E.²,Manfra Michael J.¹²⁴⁵,McGill Stephen⁶,Garcia Carlos⁶⁷,Khodaparast Giti A.³,Malis Oana¹^ORCID

Affiliation:

1. Department of Physics and Astronomy Purdue University West Lafayette IN 47907 USA

2. Birck Nanotechnology Center Purdue University West Lafayette IN 47907 USA

3. Department of Physics Virginia Tech Blacksburg VA 24061 USA

4. Elmore Family School of Electrical and Computer Engineering Purdue University West Lafayette IN 47907 USA

5. School of Materials Engineering Purdue University West Lafayette IN 47907 USA

6. National High Magnetic Field Laboratory Tallahassee FL 32310 USA

7. Department of Physics Florida State University Tallahassee FL 32306 USA

Funder

National Science Foundation

Air Force Office of Scientific Research

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/pssb.202100569

Reference56 articles.

1. Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz

2. Internal quantum efficiency and nonradiative recombination coefficient of GaInN/GaN multiple quantum wells with different dislocation densities

3. Towards understanding the emission efficiency of nitride quantum wells

4. Efficiency droop behaviors of InGaN∕GaN multiple-quantum-well light-emitting diodes with varying quantum well thickness

5. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells

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