Disentangling the Impact of Point Defect Density and Carrier Localization-Enhanced Auger Recombination on Efficiency Droop in (In,Ga)N/GaN Quantum Wells-Reference-Cited by-同舟云学术

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Disentangling the Impact of Point Defect Density and Carrier Localization-Enhanced Auger Recombination on Efficiency Droop in (In,Ga)N/GaN Quantum Wells

Published:2023-07-19 Issue:8 Volume:10 Page:2632-2640
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Barrett R. M.¹,McMahon J. M.²³^ORCID,Ahumada-Lazo R.¹^ORCID,Alanis J. A.¹,Parkinson P.¹^ORCID,Schulz S.²³^ORCID,Kappers M. J.⁴,Oliver R. A.⁴^ORCID,Binks D.¹^ORCID

Affiliation:

1. Department of Physics & Astronomy & Photon Science Institute, University of Manchester, Manchester M13 9PL, U.K.

2. School of Physics, University College Cork, Cork T12 R5CP, Ireland

3. Tyndall National Institute, University of Cork, Cork T12 R5CP, Ireland

4. Department of Materials & Metallurgy, University of Cambridge, Cambridge CB3 0FS, U.K.

Funder

Engineering and Physical Sciences Research Council

UK Research and Innovation

Science Foundation Ireland

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.3c00355

Reference39 articles.

1. High Internal Quantum Efficiency Blue-Green Light-Emitting Diode with Small Efficiency Droop Fabricated on Low Dislocation Density GaN Substrate

2. On resonant optical excitation and carrier escape in GaInN/GaN quantum wells

3. Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remedies

4. Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

5. Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy

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1. Tuning Ultrafast Carrier Dynamics and Broadband Photo-Response of High-Performance Sb₂Se₃ Thin Film Photodetectors: A Substrate Dependent Study;ACS Photonics;2024-03-05

2. Effects of impurity band on multiphoton photocurrent in GaN and InGaN photodetectors;Optical Materials;2024-03

3. Light-Emitting Devices and Semiconductor Lasers;Graduate Texts in Physics;2024

4. Carrier density dependent Auger recombination in c-plane (In,Ga)N/GaN quantum wells: insights from atomistic calculations;Journal of Physics D: Applied Physics;2023-12-22

5. Electronic and optical properties of boron-containing GaN alloys: The role of boron atom clustering;APL Materials;2023-09-01

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