Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy-Reference-Cited by-同舟云学术

Evidence for trap-assisted Auger recombination in MBE grown InGaN quantum wells by electron emission spectroscopy

Published:2020-03-02 Issue:9 Volume:116 Page:091102
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Myers Daniel J.¹^ORCID,Espenlaub Andrew C.¹^ORCID,Gelzinyte Kristina²^ORCID,Young Erin C.¹^ORCID,Martinelli Lucio³,Peretti Jacques³,Weisbuch Claude¹³,Speck James S.¹

Affiliation:

1. Materials Department, University of California, Santa Barbara, California 93106, USA

2. Institute of Applied Research, Vilnius University, Sauletekio 9-3, 10222 Vilnius, Lithuania

3. Laboratoire de Physique de la Matière Condensée, CNRS, Ecole Polytechnique, IP Paris, 91128 Palaiseau Cedex, France

Funder

U.S. Department of Energy

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5125605

Reference31 articles.

1. Direct Measurement of Auger Electrons Emitted from a Semiconductor Light-Emitting Diode under Electrical Injection: Identification of the Dominant Mechanism for Efficiency Droop

2. Origin of electrons emitted into vacuum from InGaN light emitting diodes

3. Negative electron affinity and electron emission at cesiated GaN and AlN surfaces

4. Identification of low-energy peaks in electron emission spectroscopy of InGaN/GaN light-emitting diodes

5. Determination of the first satellite valley energy in the conduction band of wurtzite GaN by near-band-gap photoemission spectroscopy

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