Origin of electrons emitted into vacuum from InGaN light emitting diodes-Reference-Cited by-同舟云学术

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Origin of electrons emitted into vacuum from InGaN light emitting diodes

Published:2014-08-04 Issue:5 Volume:105 Page:052103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Iveland Justin,Piccardo Marco,Martinelli Lucio,Peretti Jacques,Choi Joo Won,Young Nathan,Nakamura Shuji,Speck James S.,Weisbuch Claude

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4892473

Reference24 articles.

1. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

2. High-brightness AlGaInN light-emitting diodes

3. Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material

4. Efficiency droop in light-emitting diodes: Challenges and countermeasures

5. Auger recombination in InGaN measured by photoluminescence

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3. Injection mechanisms in a III -nitride light-emitting diode as seen by self-emissive electron microscopy;Physical Review Applied;2023-12-26

4. Steady-state junction current distribution in p-n GaN diodes measured using low-energy electron microscopy (LEEM);Applied Physics Letters;2023-07-17

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