Steady-state junction current distribution in p-n GaN diodes measured using low-energy electron microscopy (LEEM)

Author:

Ho Wan Ying1ORCID,Johnson Cameron W.2,Tak Tanay1ORCID,Sauty Mylène3ORCID,Chow Yi Chao1ORCID,Nakamura Shuji14ORCID,Schmid Andreas2ORCID,Peretti Jacques3ORCID,Weisbuch Claude13ORCID,Speck James S.1ORCID

Affiliation:

1. Materials Department, University of California 1 , Santa Barbara, California 93106-5050, USA

2. Molecular Foundry, Lawrence Berkeley National Laboratory 2 , One Cyclotron Road, Building 67, Berkeley, California 94720, USA

3. Laboratoire de Physique de la Matière Condensée, CNRS, Ecole Polytechnique 3 , IP Paris , 91120 Palaiseau, France

4. Department of Electrical Engineering, University of California 4 , Santa Barbara, California 93106-5050, USA

Abstract

We report on the measurement of the lateral distribution of the junction current of an electrical biased p-n GaN diode by electron emission microscopy using a low-energy electron microscope. The vacuum level at the surface of the diode was lowered by deposition of cesium to achieve negative electron affinity, allowing overflow electrons at the surface of the biased diodes to be emitted and their spatial distribution imaged. The results were compared to the literature, and a good match with analytical solutions by Joyce and Wemple [J. Appl. Phys. 41, 3818 (1970)] was obtained.

Funder

Solid State Lighting and Energy Electronics Center, University of California Santa Barbara

Collaborative Research in Engineering, Science and Technology Centre

Office of Energy Efficiency and Renewable Energy

Simons Foundation

National Science Foundation

Sandia National Laboratories

Office of Science

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

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