On resonant optical excitation and carrier escape in GaInN/GaN quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3089691
Reference15 articles.
1. Origin of efficiency droop in GaN-based light-emitting diodes
2. Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop
3. Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes
4. Analysis of dependence of electroluminescence efficiency of AlInGaN LED heterostructures on pumping
5. Analysis of processes limiting quantum efficiency of AlGaInN LEDs at high pumping
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