Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes-Reference-Cited by-同舟云学术

Reduction in efficiency droop, forward voltage, ideality factor, and wavelength shift in polarization-matched GaInN/GaInN multi-quantum-well light-emitting diodes

Published:2009-01-05 Issue:1 Volume:94 Page:011113
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Xu Jiuru,Schubert Martin F.,Noemaun Ahmed N.,Zhu Di,Kim Jong Kyu,Schubert E. Fred,Kim Min Ho,Chung Hun Jae,Yoon Sukho,Sone Cheolsoo,Park Yongjo

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3058687

Reference14 articles.

1. Origin of efficiency droop in GaN-based light-emitting diodes

2. Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes

3. Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop

4. Carrier leakage in InGaN quantum well light-emitting diodes emitting at 480 nm

5. On the efficiency droop in InGaN multiple quantum well blue light emitting diodes and its reduction with p-doped quantum well barriers

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