Tuning carrier localization in In-rich InGaN alloys: Correlations between growth kinetics and optical properties
Author:
Affiliation:
1. Department of Physics, University of Crete, 71003 Heraklion-Crete, Greece
2. Institute of Electronic Structure and Laser (IESL), Foundation for Research and Technology-Hellas (FORTH), 71110 Heraklion-Crete, Greece
Funder
European Social Fund
National Strategic Reference Framework
Materials and Processes for Energy and Environment Applications
Competitiveness, Entrepreneurship and Innovation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5128448
Reference64 articles.
1. Temperature dependence of the fundamental band gap of InN
2. Optical properties of hexagonal GaN
3. Phase separation in InGaN thick films and formation of InGaN/GaN double heterostructures in the entire alloy composition
4. Influence of polarization fields on carrier lifetime and recombination rates in InGaN-based light-emitting diodes
5. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system
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2. Analysis of the optical gain due to free-to-bound electronic transitions in indium-rich InGaN layers;Journal of Applied Physics;2023-12-06
3. In(Ga)N 3D Growth on GaN-Buffered On-Axis and Off-Axis (0001) Sapphire Substrates by MOCVD;Nanomaterials;2022-10-06
4. Analysis using a two-layer model of the transport properties of InGaN epilayers grown on GaN template substrate;Materials Science in Semiconductor Processing;2022-06
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