Author:
Kauer M.,Bousquet V.,Hooper S. E.,Barnes J. M.,Windle J.,Tan W. S.,Heffernan J.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference16 articles.
1. High-Power and Long-Lifetime InGaN Multi-Quantum-Well Laser Diodes Grown on Low-Dislocation-Density GaN Substrates
2. GaN-Based High Power Blue-Violet Laser Diodes
3. T. Kozaki, H. Matsumura, Y. Sugimoto, S. Nagahama, and T. Mukai, Proc. SPIE, Vol. 6133 (SPIE, Bellingham, WA, 2006), pp. 16-27.
4. InGaN multiple quantum well laser diodes grown by molecular beam epitaxy
5. InGaN-Based Multi-Quantum-Well-Structure Laser Diodes
Cited by
15 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献