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Semi-polar nitride surfaces and heterostructures

Published:2010-10-20 Issue:3 Volume:248 Page:561-573
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Strittmatter André,Northrup John E.,Johnson Noble M.,Kisin Mikhail V.,Spiberg Philippe,El-Ghoroury Hussein,Usikov Alexander,Syrkin Alexander

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference44 articles.

1. Characteristics of InGaN-Based UV/Blue/Green/Amber/Red Light-Emitting Diodes

2. Status and Future of High-Power Light-Emitting Diodes for Solid-State Lighting

3. Origin of efficiency droop in GaN-based light-emitting diodes

4. Auger recombination in InGaN measured by photoluminescence

5. Erratum: “Influence of internal fields on gain and spontaneous emission in InGaN quantum wells” [Appl. Phys. Lett. 89, 171120 (2006)]

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1. InGaN/GaN superlattice underlayer for fabricating of red nanocolumn μ-LEDs with (10-11) plane InGaN/AlGaN MQWs;Nanotechnology;2023-08-14

2. Multiwavelength Emission from InGaN/GaN MQW Truncated Pyramids Grown on a GaN Dodecagonal Pyramid Template;Crystal Growth & Design;2023-04-20

3. Comparative investigation of semipolar (11–22) GaN grown on patterned (113) Si with different V/III ratios via MOCVD;Semiconductor Science and Technology;2023-02-06

4. Crystalline orientation and anisotropy of semi-polar GaN films grown on m-sapphire substrate by hydride vapor phase epitaxy;Journal of Crystal Growth;2022-10

5. High-efficiency InGaN red micro-LEDs for visible light communication;Photonics Research;2022-07-28

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