Crystalline orientation and anisotropy of semi-polar GaN films grown on m-sapphire substrate by hydride vapor phase epitaxy

Author:

Zhang Lin,Wang ZerenORCID,Wu Jiejun,Han Tong,Liu Fang,Zhu Xingyu,Yu Tongjun

Funder

National Natural Science Foundation of China

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference34 articles.

1. Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors;Marino;IEEE Trans. Electron Devices,2010

2. High efficiency GaN-based light-emitting diodes fabricated on dielectric mask-embedded structures;Lee;Appl. Phys. Lett.,2009

3. Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1 0 (1)over-bar 0) and semipolar (1 1 (2)over-bar 2) orientations;Masui;J. Phys. D-Appl. Phys.,2009

4. Theoretical study of orientation dependence of piezoelectric effects in wurtzite strained GaInN/GaN heterostructures and quantum wells;Takeuchi;Jpn. J. Appl. Phys. Part 1 - Regul. Pap. Short Notes Rev. Pap.,2000

5. Nitrides with Nonpolar Surfaces: Growth, Properties, and Devices;Paskova,2008

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