Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1 0 \bar1 0) and semipolar (1 1 \bar{2} 2) orientations-Reference-Cited by-同舟云学术

Effects of piezoelectric fields on optoelectronic properties of InGaN/GaN quantum-well light-emitting diodes prepared on nonpolar (1 0 \bar1 0) and semipolar (1 1 \bar{2} 2) orientations

Published:2009-06-11 Issue:13 Volume:42 Page:135106
ISSN:0022-3727
Container-title:Journal of Physics D: Applied Physics
language:
Short-container-title:J. Phys. D: Appl. Phys.

Author:

Masui Hisashi,Asamizu Hirokuni,Melo Thiago,Yamada Hisashi,Iso Kenji,Cruz Samantha C,Nakamura Shuji,DenBaars Steven P

Publisher

IOP Publishing

Subject

Surfaces, Coatings and Films,Acoustics and Ultrasonics,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://stacks.iop.org/0022-3727/42/i=13/a=135106/pdf

Reference31 articles.

1. A method for selecting display primaries to match a target color gamut

2. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors

3. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

4. Study of nonpolar m-plane InGaN∕GaN multiquantum well light emitting diodes grown by homoepitaxial metal-organic chemical vapor deposition

5. Demonstration of Nonpolarm-Plane InGaN/GaN Laser Diodes

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