Quaternary alloy ScAlGaN: A promising strategy to improve the quality of ScAlN
Author:
Affiliation:
1. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA
2. Department of Materials Science and Engineering, University of Michigan, Ann Arbor, Michigan 48109, USA
Funder
Naval Research Office
NSF
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/am-pdf/10.1063/5.0060608
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4. Fully epitaxial ferroelectric ScGaN grown on GaN by molecular beam epitaxy
5. Enhancement of Piezoelectric Response in Scandium Aluminum Nitride Alloy Thin Films Prepared by Dual Reactive Cosputtering
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