Heteroepitaxial Growth of Thick α-Ga<sub>2</sub>O<sub>3</sub> Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

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Heteroepitaxial Growth of Thick α-Ga₂O₃ Films on Sapphire Substrates by Flow Modulation Epitaxy with Halide Vapor Phase Epitaxy

Published:2023-12-04 Issue:1 Volume:24 Page:205-213
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Lee Gieop¹,Cha An-Na¹²,Cho Sea¹,Chung Jeong Soo¹,Moon Young-Boo³,Ha Jun-Seok¹²⁴^ORCID

Affiliation:

1. School of Chemical Engineering, Chonnam National University, Gwangju 61186, Republic of Korea

2. Energy Convergence Core Facility, Chonnam National University, Gwangju 61186, Republic of Korea

3. UJL Inc., Siheung 15101, Republic of Korea

4. Optoelectronics Convergence Research Center, Chonnam National University, Gwangju 61186, Republic of Korea

Funder

Korea Basic Science Institute

Korea Evaluation Institute of Industrial Technology

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c00882

Reference53 articles.

1. Materials issues and devices of α- and β-Ga2O3

2. Epitaxial Growth of Alpha Gallium Oxide Thin Films on Sapphire Substrates for Electronic and Optoelectronic Devices: Progress and Perspective

3. One-step exfoliation of ultra-smooth β-Ga2O3 wafers from bulk crystal for photodetectors

4. Power electronics with wide bandgap materials: Toward greener, more efficient technologies

5. Recent progress in Ga2O3power devices

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