One-step exfoliation of ultra-smooth β-Ga2O3 wafers from bulk crystal for photodetectors-Reference-Cited by-同舟云学术

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One-step exfoliation of ultra-smooth β-Ga2O3 wafers from bulk crystal for photodetectors

Published:2017 Issue:34 Volume:19 Page:5122-5127
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Mu Wenxiang¹²³⁴,Jia Zhitai¹²³⁴⁵^ORCID,Yin Yanru¹²³⁴,Hu Qiangqiang¹²³⁴,Zhang Jian¹²³⁴,Feng Qian⁶⁷⁸⁹⁴,Hao Yue⁶⁷⁸⁹⁴,Tao Xutang¹²³⁴^ORCID

Affiliation:

1. State Key Laboratory of Crystal Materials & Key Laboratory of Functional Crystal Materials and Device

2. Shandong University

3. Jinan

4. China

5. State Key Laboratory of Optoelectronic Materials and Technologies

6. State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology

7. School of Microelectronics

8. Xidian University

9. Xi'an 710071

Abstract

High-quality bulk β-Ga₂O₃ single crystals have been grown by optimized edge-defined film-fed growth (EFG) method.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2017/CE/C7CE01076A

Reference31 articles.

1. Wide-bandgap semiconductor materials: For their full bloom

2. Wide-bandgap semiconductor ultraviolet photodetectors

3. Wide bandgap semiconductor materials and devices

4. Prospects for LED lighting

5. A Survey of Wide Bandgap Power Semiconductor Devices

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