Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108110
Reference5 articles.
1. Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN
2. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
3. Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
4. Growth of single crystalline GaN film on Si substrate using 3C-SiC as an intermediate layer
5. Growth of single crystal GaN substrate using hydride vapor phase epitaxy
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