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Growth and analysis of modulation-doped AlGaN/GaN heterostructure on semi-insulating SiC substrate

  • Published:2014-06 Issue: Volume:395 Page:5-8
  • ISSN:0022-0248
  • Container-title:Journal of Crystal Growth
  • language:en
  • Short-container-title:Journal of Crystal Growth

Author:

Kim Dong-Seok,Won Chul-Ho,Kim Ryun-Hwi,Lim Byeong-Ok,Choi Gil-Wong,Lee Bok-Hyung,Kim Hyoung-Joo,Hong In-Pyo,Lee Jung-Hee

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Cited by 12 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the Influence of Transistor Dimensions on the Dispersive Behavior in AlGaN/GaN HEMT-Based PAs and Robust LNAs;2022 IEEE/MTT-S International Microwave Symposium - IMS 2022;2022-06-19

2. High Quality AlGaN/GaN HEMT Homo-epitaxy on 4-inch Homebred GaN Substrate by MOCVD;2021 18th China International Forum on Solid State Lighting & 2021 7th International Forum on Wide Bandgap Semiconductors (SSLChina: IFWS);2021-12-06

3. Preparation of Ceria-Coated Silica Nanoparticles and Their Chemical Mechanical Planarization Performance on Si-Face 6H-SiC Substrates;ECS Journal of Solid State Science and Technology;2021-12-01

4. Anomalous DC Characteristics of AlGaN/GaN HEMTs Depending on Proton Irradiation Energies;ECS Journal of Solid State Science and Technology;2020-07-10

5. Improvement in surface morphology and 2DEG properties of AlGaN/GaN HEMT;Journal of Alloys and Compounds;2020-01
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