Improvement in surface morphology and 2DEG properties of AlGaN/GaN HEMT-Reference-Cited by-同舟云学术

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Improvement in surface morphology and 2DEG properties of AlGaN/GaN HEMT

Published:2020-01 Issue: Volume:815 Page:152283
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Narang Kapil,Bag Rajesh K.,Singh Vikash K.,Pandey Akhilesh,Saini Sachin K.,Khan Ruby,Arora Aman,Padmavati M.V.G.,Tyagi Renu,Singh Rajendra

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference38 articles.

1. High Al-content AlGaN/GaN MODFET's for ultrahigh performance;Wu;IEEE Electron. Device Lett.,1998

2. AlGaN/AlN/GaN high-power microwave HEMT;Shen;IEEE Electron. Device Lett.,2001

3. GaN HEMT and MMIC development at Fraunhofer IAF: performance and reliability;Waltereit;Phys. Status Solidi Appl. Mater. Sci.,2009

4. Electron transport in AlGaN-GaN heterostructures grown on 6H-SiC substrates;Gaska;Appl. Phys. Lett.,1998

5. 30-W/mm GaN HEMTs by field plate optimization;Wu;IEEE Electron. Device Lett.,2004

Cited by 32 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effect of GaN Cap Thickness on the DC Performance of AlGaN/GaN HEMTs;Micromachines;2024-04-26

2. Monolithic n‐Type Metal–Oxide–Semiconductor Inverter Integrated Circuits Based on Wide and Ultrawide Bandgap Semiconductors;physica status solidi (b);2024-04-15

3. Theoretical Studies of 2D Electron Gas Distributions and Scattering Characteristics in Double‐Channel n‐Al_0.3Ga_0.7N/GaN/i‐Al_xGa_1−xN/GaN High‐Electron‐Mobility Transistors;physica status solidi (a);2024-03-14

4. Optical and Electrical Properties of AlxGa1−xN/GaN Epilayers Modulated by Aluminum Content;Molecules;2024-03-05

5. Effect of laser fluence on the optoelectronic properties of nanostructured GaN/porous silicon prepared by pulsed laser deposition;Scientific Reports;2023-11-29

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