Growth of gallium nitride by hydride vapor-phase epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference27 articles.
1. Light scattering in high‐dislocation‐density GaN
2. Temperature activated conductance in GaN/AlGaN heterostructure field effect transistors operating at temperatures up to 300 °C
3. High dislocation densities in high efficiency GaN‐based light‐emitting diodes
4. High pressure vapor growth of GaN
5. Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layer
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