Robust Heteroepitaxial Growth of GaN Formulated on Porous TiN Buffer Layers-Reference-Cited by-同舟云学术

Robust Heteroepitaxial Growth of GaN Formulated on Porous TiN Buffer Layers

Published:2023-12-19 Issue:1 Volume:24 Page:214-223
ISSN:1528-7483
Container-title:Crystal Growth & Design
language:en
Short-container-title:Crystal Growth & Design

Author:

Kim Jongbeom¹,Chung Hee-Suk²,Oh Kyu Hwan¹,Han Heung Nam¹,Lim Taehwan³^ORCID,Lee Hyo-Jong⁴^ORCID,Kim Jung Han⁴^ORCID

Affiliation:

1. Department of Materials Science and Engineering & Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Republic of Korea

2. Electron Microscopy and Spectroscopy Team, Korea Basic Science Institute, Daejeon 34133, Republic of Korea

3. Division of Chemical Engineering and Bioengineering, Kangwon National University, Chuncheon 24341, Republic of Korea

4. Department of Materials Science and Engineering, Dong-A University, Busan 49315, Republic of Korea

Funder

National Research Foundation of Korea

Korea Evaluation Institute of Industrial Technology

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.3c00883

Reference56 articles.

1. 2D III‐Nitride Materials: Properties, Growth, and Applications

2. III-nitride photonic crystals

3. Theoretical study of the two-dimensional electron mobility in strained III-nitride heterostructures

4. Effects of cationdstates on the structural and electronic properties of III-nitride and II-oxide wide-band-gap semiconductors

5. Structural and electronic properties of group-III nitrides

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