High pressure vapor growth of GaN
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference10 articles.
1. The Equilibrium Pressure of N2 over GaN
2. High pressure solution growth of GaN
3. Thermal stability of indium nitride at elevated temperatures and nitrogen pressures
4. Effect of growth parameters on the properties of GaN : Zn epilayers
5. Properties of Zn‐doped GaN. II. Photoconductivity
Cited by 26 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Improved midgap recombination lifetimes in GaN crystals grown by the low-pressure acidic ammonothermal method;Applied Physics Letters;2024-04-29
2. High-Pressure Bulk Synthesis of InN by Solid-State Reaction of Binary Oxide in a Multi-Anvil Apparatus;Inorganic Chemistry;2023-03-16
3. Current methods for GaN synthesis and the limitations;Journal of Physics: Conference Series;2020-11-01
4. Temperature dependence of internal quantum efficiency of radiation for the near-band-edge emission of GaN crystals quantified by omnidirectional photoluminescence spectroscopy;Applied Physics Express;2020-09-25
5. GaN Substrate Material for III–V Semiconductor Epitaxy Growth;Light-Emitting Diodes;2019
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3