Improved utilization efficiency of Ga source and flatness of GaN layer by pulsed-GaCl flow modulation on hydride vapor phase epitaxy-Reference-Cited by-同舟云学术

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Improved utilization efficiency of Ga source and flatness of GaN layer by pulsed-GaCl flow modulation on hydride vapor phase epitaxy

Published:2014-10 Issue: Volume:403 Page:55-58
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Yamane Keisuke,Hashimoto Yasuhiro,Okada Narihito,Tadatomo Kazuyuki

Funder

Ministry of Education, Culture, Sports, Science and Technology, Japan

Tokuyama Science Foundation

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference26 articles.

1. Spontaneous polarization and piezoelectric constants of III-V nitrides

2. Theoretical Study of Orientation Dependence of Piezoelectric Effects in Wurtzite Strained GaInN/GaN Heterostructures and Quantum Wells

3. High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy

4. Vertical chip of GaN-based blue light-emitting diode

5. Low Threshold Current Density InGaN Based 520–530 nm Green Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

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