Vertical chip of GaN-based blue light-emitting diode
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference8 articles.
1. Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of thep-GaN surface
2. AlGaN/GaN HEMTs on SiC with f/sub T/ of over 120 GHz
3. Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient Temperatures
4. Growth of Room-Temperature 1.32-mum-Emitting InAs Quantum Dots Using GaAs/InAs Quasi-Monolayers
5. GaN/AlGaN high electron mobility transistors with f of 110 GHz
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