Improved light-output and electrical performance of InGaN-based light-emitting diode by microroughening of thep-GaN surface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1571962
Reference10 articles.
1. Metal semiconductor field effect transistor based on single crystal GaN
2. High-power AlGaInN flip-chip light-emitting diodes
3. Effect of Barrier Thickness on the Interface and Optical Properties of InGaN/GaN Multiple Quantum Wells
4. Formation of 10 nm Si structures using size-selected metal clusters
5. Fabrication of silicon nanopillars using self-organized gold–chromium mask
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