High-power AlGaInN flip-chip light-emitting diodes-Reference-Cited by-同舟云学术

High-power AlGaInN flip-chip light-emitting diodes

Published:2001-05-28 Issue:22 Volume:78 Page:3379-3381
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Wierer J. J.,Steigerwald D. A.,Krames M. R.,O’Shea J. J.,Ludowise M. J.,Christenson G.,Shen Y.-C.,Lowery C.,Martin P. S.,Subramanya S.,Götz W.,Gardner N. F.,Kern R. S.,Stockman S. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1374499

Reference6 articles.

1. COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONS

2. Very high‐efficiency semiconductor wafer‐bonded transparent‐substrate (AlxGa1−x)0.5In0.5P/GaP light‐emitting diodes

3. High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency

4. Detection of hydrogen‐plasma‐induced defects in Si by positron annihilation

5. Amber InGaN-Based Light-Emitting Diodes Operable at High Ambient Temperatures

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