High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency-Reference-Cited by-同舟云学术

High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light-emitting diodes exhibiting >50% external quantum efficiency

Published:1999-10-18 Issue:16 Volume:75 Page:2365-2367
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Krames M. R.,Ochiai-Holcomb M.,Höfler G. E.,Carter-Coman C.,Chen E. I.,Tan I.-H.,Grillot P.,Gardner N. F.,Chui H. C.,Huang J.-W.,Stockman S. A.,Kish F. A.,Craford M. G.,Tan T. S.,Kocot C. P.,Hueschen M.,Posselt J.,Loh B.,Sasser G.,Collins D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.125016

Reference18 articles.

1. COHERENT (VISIBLE) LIGHT EMISSION FROM Ga(As1−xPx) JUNCTIONS

2. The Effect of Nitrogen Doping on GaAs1−xPx Electroluminescent Diodes

3. EFFICIENT VISIBLE ELECTROLUMINESCENCE AT 300°K FROM Ga1‐xAlxAs p‐n JUNCTIONS GROWN BY LIQUID‐PHASE EPITAXY

4. Minority‐carrier lifetime measurements of efficient GaAlAsp‐nheterojunctions

5. High efficient GaAlAs light‐emitting diodes of 660 nm with a double heterostructure on a GaAlAs substrate

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