Minority‐carrier lifetime measurements of efficient GaAlAsp‐nheterojunctions-Reference-Cited by-同舟云学术

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Minority‐carrier lifetime measurements of efficient GaAlAsp‐nheterojunctions

Published:1977-08 Issue:8 Volume:48 Page:3484-3495
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Nishizawa J.,Suto K.,Teshima T.

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.324198

Reference16 articles.

1. Properties of Sn‐doped GaAs

2. Liquid phase epitaxy of GaP by a temperature difference method under controlled vapor pressure

3. Nearly perfect crystal growth of III–V compounds by the temperature difference method under controlled vapour pressure

4. Efficient Electroluminescence from Zinc‐Diffused Ga1−xAlxAs Diodes at 25°C

5. The graded‐gap Alx Ga1 − x As–GaAs heterojunction

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