Determination of deep-level defects in Cu2ZnSn(S,Se)4 thin-films using photocapacitance method-Reference-Cited by-同舟云学术

Determination of deep-level defects in Cu2ZnSn(S,Se)4 thin-films using photocapacitance method

Published:2015-06-15 Issue:24 Volume:106 Page:243905
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Islam Muhammad Monirul¹²^ORCID,Halim Mohammad Abdul²,Sakurai Takeaki²,Sakai Noriyuki³,Kato Takuya³,Sugimoto Hiroki³,Tampo Hitoshi⁴,Shibata Hajime⁴,Niki Shigeru⁴,Akimoto Katsuhiro¹²

Affiliation:

1. Faculty of Pure and Applied Sciences, Alliance for Research on North Africa (ARENA), University of Tsukuba, Ibaraki 305-8572, Japan

2. Division of Applied Physics, University of Tsukuba, Ibaraki 305-8573, Japan

3. Energy Solution Business Center, Showa Shell Sekiyu K.K., Tokyo 135-8074, Japan

4. National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki 305-8568, Japan

Funder

New Energy and Industrial Technology Development Organisation (NEDO)

Ministry of Economy, Trade and Industry (Japanese Ministry of Economy, Trade and Industry)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4922810

Reference29 articles.

1. Preparation of Cu2ZnSnS4 thin films by hybrid sputtering

2. Enhanced Conversion Efficiencies of Cu2ZnSnS4-Based Thin Film Solar Cells by Using Preferential Etching Technique

3. A 3.2% efficient Kesterite device from electrodeposited stacked elemental layers

4. Crystal and electronic band structure of Cu2ZnSnX4 (X=S and Se) photovoltaic absorbers: First-principles insights

5. Electronic and optical properties of Cu2ZnSnS4 and Cu2ZnSnSe4

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