Nearly perfect crystal growth of III–V compounds by the temperature difference method under controlled vapour pressure
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference8 articles.
1. Annealing ofN-Type GaAs under Excess Arsenic Vapor
2. Nonstoichiometry of Te-Doped GaAs
3. Heat treatment of gallium phosphide
4. Properties of Sn‐doped GaAs
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